发明名称 |
Semiconductor device with increased distance between channel edges and a gate electrode |
摘要 |
The semiconductor device of this invention includes a substrate having an insulating surface and a thin film transistor formed on the substrate, wherein the thin film transistor has a semiconductor island including a channel region and source/drain regions, a gate insulating film formed on the semiconductor island and a gate electrode covering the channel region of the semiconductor island interposing the gate insulating film therebetween, and wherein a distance between an edge of the channel region of the semiconductor island and the gate electrode is larger than a distance between a central portion of the channel region of the semiconductor island and the gate electrode.
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申请公布号 |
US6010922(A) |
申请公布日期 |
2000.01.04 |
申请号 |
US19970996121 |
申请日期 |
1997.12.22 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
HATA, AKIHIRO;FUNAI, TAKASHI;ADACHI, MASAHIRO |
分类号 |
G02F1/136;G02F1/1368;H01L21/336;H01L29/423;H01L29/786;(IPC1-7):H01L21/00;H01L21/84 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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