| 摘要 |
A thin film transistor and a fabrication method thereof which are capable of increasing an ON/OFF current ratio and simplifying a fabrication process by eliminating a masking process. The thin film transistor includes a substrate, an active layer formed on the substrate, a gate electrode formed on the active layer and the substrate and having an opening portion inwardly extended from one edge surface thereof, an offset region formed in the active layer matching with the opening portion, and impurity regions formed within the active layer at both sides of the gate electrode.
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