发明名称 |
Method for forming a thin semiconductor film and a plasma CVD apparatus to be used in the method |
摘要 |
A method for producing a thin semiconductor film according to the present invention includes the steps of: placing a group-IV compound or a derivative thereof in a plasma state; decomposing the group-IV compound or the derivative thereof into active species; and depositing the active species on a substrate, wherein energy for generating plasma is intermittently supplied at a supply time interval which is equal to or less than a reciprocal of {(secondary reaction rate constant of a source gas reacting with active species other than long-life active species within the plasma)x(number of source gas molecules)}.
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申请公布号 |
US6009828(A) |
申请公布日期 |
2000.01.04 |
申请号 |
US19970783283 |
申请日期 |
1997.01.10 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
TOMITA, TAKASHI;NOMOTO, KATSUHIKO;YAMAMOTO, YOSHIHIRO;SANNOMIYA, HITOSHI;TAKAGI, SAE |
分类号 |
C23C16/515;H01L31/20;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/515 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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