发明名称 |
Method and system for providing an interconnect having reduced failure rates due to voids |
摘要 |
A system and method for providing an interconnect on a substrate is disclosed. The method and system include providing a first layer, a first barrier layer, and a second layer. The first layer is subject to electromigration and has a thickness. The thickness of the first layer is smaller than what is required to support formation of a void. The first barrier layer is resistant to electromigration. The first barrier layer is disposed between the first layer and the second layer. In a second aspect, the method and system include providing a first layer and a first barrier layer. The first layer is subject to electromigration and has a thickness. The thickness of the first layer is smaller than what is required to support formation of a void. The first barrier layer is resistant to electromigration.
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申请公布号 |
US6010960(A) |
申请公布日期 |
2000.01.04 |
申请号 |
US19970959591 |
申请日期 |
1997.10.29 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
NOGAMI, TAKESHI |
分类号 |
H01L21/768;(IPC1-7):H01L21/28;H01L21/283;H01L21/44;H01L21/441 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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