发明名称 Method and system for providing an interconnect having reduced failure rates due to voids
摘要 A system and method for providing an interconnect on a substrate is disclosed. The method and system include providing a first layer, a first barrier layer, and a second layer. The first layer is subject to electromigration and has a thickness. The thickness of the first layer is smaller than what is required to support formation of a void. The first barrier layer is resistant to electromigration. The first barrier layer is disposed between the first layer and the second layer. In a second aspect, the method and system include providing a first layer and a first barrier layer. The first layer is subject to electromigration and has a thickness. The thickness of the first layer is smaller than what is required to support formation of a void. The first barrier layer is resistant to electromigration.
申请公布号 US6010960(A) 申请公布日期 2000.01.04
申请号 US19970959591 申请日期 1997.10.29
申请人 ADVANCED MICRO DEVICES, INC. 发明人 NOGAMI, TAKESHI
分类号 H01L21/768;(IPC1-7):H01L21/28;H01L21/283;H01L21/44;H01L21/441 主分类号 H01L21/768
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