| 摘要 |
Disclosed is a capacitive structure and method for making the capacitive structure for suppressing inductive noise produced by high performance device power supplies. The capacitive structure includes a trench having a bottom surface and respective walls that are integral with the bottom surface. The trench is defined in a semiconductor substrate and is configured to isolate at least one transistor active area from another transistor active area. The structure further includes an oxide layer that is defined along the bottom surface and the respective walls of the trench, such that a channel is defined within the trench between the oxide layer that is defined along the bottom surface and the respective walls. The structure also includes a conductive polysilicon layer that is defined within the channel and is within the trench. The conductive polysilicon layer defines a conductive electrode that is separated from the semiconductor substrate by a thickness of the oxide layer.
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