发明名称 |
Voltage supply circuit and semiconductor device including such circuit |
摘要 |
The level shifter circuit of an internal down converter includes a P channel MOS transistor constituting a resistance component, and a resistor constituting a resistance component. The temperature coefficient of resistance component is set larger than the temperature coefficient of resistance component so that the output voltage of level shifter circuit has a negative temperature characteristic. If a reference voltage generated by reference voltage generation circuit decreases when operating at a high temperature, the output voltage of level shifter circuit decreases as well. Thus, change in an internal voltage due to change in the operation temperature can be compensated.
|
申请公布号 |
US6011428(A) |
申请公布日期 |
2000.01.04 |
申请号 |
US19930135650 |
申请日期 |
1993.10.14 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TSUKUDE, MASAKI;HAYASHIKOSHI, MASANORI |
分类号 |
G05F1/56;G05F3/24;G11C5/14;G11C11/401;G11C11/407;H03K5/003;(IPC1-7):G05F1/10 |
主分类号 |
G05F1/56 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|