Method of forming a capacitor

摘要

A semiconductor processing method of forming a stacked container capacitor includes, a) providing a pair of spaced conductive runners relative to a substrate, the conductive runners respectively having electrically insulative sidewall spacers and an electrically insulative cap, the caps having respective outer surfaces; b) providing a node between the runners to which electrical connection to a capacitor is to be made; c) providing an electrically conductive pillar in electrical connection with the node, the pillar projecting outwardly relative to the node between the runners and having a first outer surface positioned outwardly of both runner caps, the pillar completely filling the space between the pair of runners at the location where the pillar is located; d) providing an insulating dielectric layer outwardly of the caps and the conductive pillar; e) etching a container opening through the insulating dielectric layer to outwardly expose the conductive pillar first outer surface; f) etching the exposed conductive pillar to define a pillar second outer surface which is closer to the node than the pillar first outer surface and to deepen the container opening; g) providing an electrically conductive storage node container layer within the container opening over the second outer conductive pillar surface; h) providing a capacitor dielectric layer over the capacitor storage node layer; and i) providing an electrically conductive outer capacitor plate over the capacitor dielectric layer. Such a capacitor construction is also disclosed.