发明名称 |
Independent gas feeds in a plasma reactor |
摘要 |
A plasma etch reactor having independent gas feeds above the wafer and either at the sides or below the wafer. Preferably, a carrier gas such as argon is supplied from a showerhead electrode above the wafer while an etching gas is supplied from below. In the case of selectively etching an oxide over a non-oxide layer, the etchant gas should include one or more fluorocarbons.
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申请公布号 |
US6009830(A) |
申请公布日期 |
2000.01.04 |
申请号 |
US19970975907 |
申请日期 |
1997.11.21 |
申请人 |
APPLIED MATERIALS INC. |
发明人 |
LI, HAOJIANG;WU, ROBERT W. |
分类号 |
H01J37/32;H01L21/311;(IPC1-7):C23C16/00 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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