发明名称 |
Negatively acting photoresist composition based on polyimide precursors |
摘要 |
A negatively operating photoresist composition comprising: (a) a polyimide precursor containing repeating structural units of formula (1) the composition comprises in all as many structural units of formula (I), which have residues R2, that the composition can be developed by means of aqueous-alkaline developers for photoresists, which are free of organic solvents.
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申请公布号 |
US6010825(A) |
申请公布日期 |
2000.01.04 |
申请号 |
US19980151218 |
申请日期 |
1998.09.10 |
申请人 |
OLIN MICROELECTRONICS CHEMICALS, INC. |
发明人 |
HAGEN, SIGURD;REICHLIN, NADIA |
分类号 |
G03F7/038;(IPC1-7):G03F7/038;G03F7/30 |
主分类号 |
G03F7/038 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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