Semiconductor wafer surface cleaning prior to gate oxide growth, after polishing or after sacrificial oxidation in ULSI IC manufacture

摘要

Semiconductor wafer surface cleaning comprises rinsing in an aqueous solution which is filtered before and after ozone and hydrogen chloride dissolution and after hydrofluoric acid injection. A semiconductor wafer surface cleaning process comprises rinsing in an aqueous solution which has been subjected to filtration before and after dissolution of ozone at a concentration between 1 ppm and saturation, followed by filtration before and after dissolution of hydrogen chloride gas at a concentration of less than 1 M and then filtration after injection of 0.01 - 10% hydrofluoric acid into the temperature controlled ultra-pure water.