| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, allowing the burn-in to be efficiently executed in a state of wafer before dicing and in a state of product after assembling, and manufacturing method thereof and burn-in method. SOLUTION: The semiconductor device comprises a power lead-in line 6 connected to a power wiring, burn-in mode(BI mode) detector circuit 20 connected to the power lead-in line for detecting a power voltage applied to the power wiring, self-oscillator circuit 40 for generating specified clock at burn-in, timing generator circuit 50 for generating and outputting a timing clock at burn-in, BI mode control circuit 60 for transmitting control signals to a plurality of circuits executed at burn-in mode, and power circuit 10 for feeding power voltages of a first power line to the circuits such as self-oscillator circuit, etc. This provides the effect that only by connecting the power source and ground power source GND to electrode regions on the wafer, the power can be fed to each of semiconductor chips on the wafer, the BI mode operation can be executed to allow the burn-in to be executed in the state of wafer. |
