| 摘要 |
PROBLEM TO BE SOLVED: To obtain a conversion efficiency of 40% or higher, for example even in 1 cm laser bar, by optimizing the laminated structure of an epitaxial growth semiconductor layer regarding an optical semiconductor device. SOLUTION: An optical semiconductor device is provided with an active layer 8, undoped graded layers 7 and 9 that are formed on or under the active layer 8 and are as thick as 50-80 mm, graded SCH layers 6, 7, 9, and 10 made of AlGaAs material where a side close to the active layer 8 is doped within a range of a low concentration, namely a p-type = 2×10<17> to 4.5×10<17> [cm<-3> ] and an n-type = 5×10<16> to 4×10<17> [cm<-3> ], and a side close to an electrode is doped with a high concentration which exceeds the upper limit of this low concentration range, or clad layers 4, 5, 11, and 12.
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