发明名称 SEMICONDUCTOR ELEMENT AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To increase capacitance by augmenting the area of a lower electrode without changing the thickness of a bathtub type stacked capacitor. SOLUTION: An insulating film having voids V on the inside is used as an insulating film 11, to which a recessed section 12 constituting a bathtub is formed. When the recessed section 12 is formed by etching, etc., the voids V are exposed to the surface of the sidewall of the recessed section, and fine indentations 13 are formed. The substantial area of a lower electrode 22 is increased by forming the lower electrode 22 so as to be fast stuck even to the indentations.
申请公布号 JPH11354743(A) 申请公布日期 1999.12.24
申请号 JP19980159382 申请日期 1998.06.08
申请人 OKI ELECTRIC IND CO LTD 发明人 IWATAKI HAYAO
分类号 H01L27/108;H01L21/8242 主分类号 H01L27/108
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