| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer provided with a satin pattern by grinding the wafer by a grindstone. SOLUTION: In this method, the grindstone for indicating materiality for which the volumetric rate of abrasive grains occupied in the grindstone is 35-55 capacity %, a resin binder volumetric rate is 5-20 capacity %, a porosity is 25-60 capacity %, the compression elastic modulus of the grindstone is 1,000-6,000 MPa and tensile destruction elongation is 0.3-2.0% for which the abrasive grains of a grain diameter 7-40μm (grindstone grain size #320-#2000) are fixed by a resin binder is pressed to the surface of this silicon wafer sucked to a suction chuck pivotally supported by a rotating shaft, the grindstone and the suction chuck are rotated and the wafer are ground. Thus, the silicon wafer whose surface is provided with the satin pattern whose TTV(Total Thickness Variation) is less than 1μm and surface roughness (Rmax) is less than 2.0μm is obtained.
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