ELECTRONIC DEVICE EVALUATING DEVICE

摘要

PROBLEM TO BE SOLVED: To realize measurement of a single transistor characteristic in a memory cell. SOLUTION: A characteristic of a single transistor formed in a subμm area is measured by contacting probes 18 of which a tip end is covered with a liquid metal with a contact wiring 5 to 8 directly connected to the source 1, the drain 2, the substrate 3 and the gate 4 while damage to the tip end of the probes 18 to 21 is avoided.