| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the film thickness can be determined independently and differently at the side wall part and the bottom part of a cylinder type storage electrode in a memory cell. SOLUTION: An opening reaching a lower interlayer insulation film 103 is made in the storage electrode 110 forming region of an insulation film 107 formed on the lower interlayer insulating film 103 and filled with polysilicon such that the uppermost surface thereof is lower than the uppermost surface of the insulation film 107. An oxide film 109a is formed only on the inner side wall of the insulation film 107 and used as a mask for etching the polysilicon such that the thickness of unetched polysilicon will be different from that of the oxide film 109a. |
