| 摘要 |
PROBLEM TO BE SOLVED: To improve the high temperature/high output characteristics of a DC-PBH type semiconductor laser, without bringing about reducing efficiency and reliability. SOLUTION: An impurity such as Si is introduced into a recombination layer 2. The Si concentration is set approximately 1×10<17> -5×10<18> cm<-3> . As a result, the carrier life time of the recombination layer 2 is shortened and the leakage current that flows to the recombination layer 2 is increased relatively, hence the leakage current that flows to a channel 3 is reduced. Since the impurity is introduced to the combination layer or a lattice defects are given, the recombination of carriers as the recombination layer is promoted, and the leakage current that flows to the channel is reduced, thus improving high- temperature/high output characteristics without lowering the efficiency and reliability of a laser.
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