| 摘要 |
PROBLEM TO BE SOLVED: To increase the capacitance of the memory cell capacitor of a DRAM. SOLUTION: The sidewall insulating films 19 of silicon nitride films projected to sections upper than the cap silicon nitride films 16 of bit wirings for a bit wiring pattern are formed onto the side faces of the bit wiring pattern, and the effective surface areas of the storage node electrodes 21 of memory cell capacitors are increased by utilizing the projecting sections of the sidewall insulating films 19. No projected sidewall insulating film 19 collapse during manufacture, the effective areas of the storage node electrodes of the memory cell capacitors can be augmented by a comparatively simple and sure method, and sufficient capacitance can be ensured. |
