| 摘要 |
PROBLEM TO BE SOLVED: To suppress the oxidation of TiN and Ti, deterioration of the surface morphology of an Ru film, oxygen insufficiency of a BST (dielectric layer), etc., by forming oxygen diffusion preventing layers among Ru particles constituting first electrodes. SOLUTION: Oxygen diffusion preventing layers 7 are formed in such a way that, after an Ru layer 6 and an SiO2 layer 2 are formed, the SiO2 layer 2 is removed by polishing the layer 2 until the surface of the Ru layer 6 is exposed by chemical mechanical polishing, and the layers 7 are formed among the Ru particles of the Ru layer 6. Consequently, the oxygen diffusion from the spaces among the Ru particles of the Ru layer 6 can be prevented remarkably and, accordingly, the oxidation of a TiN layer 5 and a Ti layer 4 can be prevented. Since the grain boundaries of the Ru layer 6 are filled up with the oxygen diffusion preventing layers 7 and the oxidative reaction of the Ru layer 6 only occurs near the surfaces of the Ru layer 6, the deterioration of the surface morphology of the Ru film 6 which is the second problem awaiting solution the oxygen insufficiency of a BST which is the third problem to be solved can also be solved. |
