发明名称 PRODUCTION OF HALFTONE TYPE PHASE SHIFT MASK
摘要 PROBLEM TO BE SOLVED: To provide a process for producing a halftone type phase shift mask which obviates the change in the properties of a translucent phase shift layer even if a processing liquid of an alkaline system adopted in the conventional production line as it is in production of this halftone type phase shift mask. SOLUTION: This process for production has the stages for forming the translucent phase shift layer 3, a light shielding layer 4 and a first resist layer 5 on a transparent substrate, removing the first resist layer of a light transparent pattern parts 8, removing the light shielding layer and translucent phase shift layer of the light transparent pattern parts by etching, peeling the first resist layer, laminating a second resist layer 6, removing the second resist layer of the light transparent pattern parts and the peripheral parts 9 of the light transparent patterns, etching the light shielding layer to remove the light shielding layer in the peripheral parts of the light transparent patterns and peeling the second resist layer at the time of producing the halftone type phase shift mask 1.
申请公布号 JPH11352668(A) 申请公布日期 1999.12.24
申请号 JP19980162632 申请日期 1998.06.10
申请人 TOPPAN PRINTING CO LTD 发明人 CHIBA KAZUAKI;TAKATSUMA MAKOTO;UNNO HIROMASA;KIKUCHI YASUTAKA;YAMADA YOSHIRO
分类号 G03F1/29;G03F1/32;G03F1/68;H01L21/027 主分类号 G03F1/29
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