发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To improve quality, to miniaturize a device and to enhance capability in the semiconductor device. SOLUTION: A multilayer wiring substrate 2 where bonding electrodes are installed in multiple stages around cavity parts 2a supporting a semiconductor chip 1, the bonding electrodes installed at the outermost stage are arranged in two columns on an inner side and an outer side and a power electrode 2d being the inner bonding electrode is installed in a thin part 2b whose thickness is thinner than a signal electrode 2c being the outer bonding electrode, bonding wires 3 connecting the pad 1a of the semiconductor chip 1 and the respective bonding electrodes of the multilayer wiring board 2 and a sealing part 4 sealing the semiconductor chip 1 and the wires 3 are installed. The wire 3 connected to the power electrode 2d and the wire 3 connected to the signal electrode 2c can be arranged without shorting them by installing the power electrode 2d in the thin part 2b.
申请公布号 JPH11354566(A) 申请公布日期 1999.12.24
申请号 JP19980158695 申请日期 1998.06.08
申请人 HITACHI LTD 发明人 MIWA TAKASHI;SUWA MOTOHIRO
分类号 H01L23/12;H01L21/60 主分类号 H01L23/12
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