发明名称 HIGH FREQUENCY INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide an inexpensive high frequency integrated circuit with new constitution. SOLUTION: In a high frequency integrated circuit, a micro strip line 2 is directly formed on a silicon substrate 1 and the resistivity of the silicon substrate l is not less than 1000Ωcm. The micro strip line 2 is branched into four lines in total at branching partsα,βandγ. A back electrode is formed at the back of the silicon substrate 1 and the back electrode is grounded. The line width of the micro strip line 2 is not less than 50μm and line thickness is not less than 1.5 times as much as that of a surface skin at an operation frequency. The operation frequency is not less than 60 GHz and 76 GHz in detail. The lines 2a, 2b, 2c and 2d are connected to antennas A, B, C and D. Mechatronics switches SW1-SW4 are installed in the branched lines 2a, 2b, 2c and 2d.
申请公布号 JPH11355003(A) 申请公布日期 1999.12.24
申请号 JP19980156194 申请日期 1998.06.04
申请人 DENSO CORP 发明人 TAGUCHI TAKASHI;MATSUGAYA KAZUOKI;HAZUMI HIROSHI;INUZUKA HAJIME
分类号 H01L27/095;H01H59/00;H01P1/12;(IPC1-7):H01P1/12 主分类号 H01L27/095
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