| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid thin film dielectric element which has a single crystal lower electrode and fully ensures the charge storage capacity so that the leak current increase, ion defects at the dielectric and electrode interface and interface level are suppressed in a semiconductor memory. SOLUTION: An insulation film 2 of an oxide film, etc., is deposited on a substrate 1, a contact electrode 3 of a metal W, etc., is formed in the insulation film 2, a barrier layer 4 of a Ti nitride film of TiN, It0.7 Al0.3 N, etc., is formed on the contact electrode 3 so as not to expose the contact electrode 3 but project from the insulation film 2, a lower electrode 5 of single crystal SrRuO3 is formed to cover the barrier layer 4, a dielectric 6 of Bax Sr1-x O3 (0<=*<=1) is formed to cover the lower electrode 5, an upper electrode 7 of SrRuO3 is formed on the dielectric 6, thus forming a full-oxide thin film dielectric element. |
