| 摘要 |
PROBLEM TO BE SOLVED: To improve the characteristics of a thick film dielectric layer with a simple process by mixing amorphous glass powder with an oxide powder, keeping it at a certain temperature in a dry oven, and depositing it on a glass substrate by instantaneously melting it by the use of a hot plasma jet flow. SOLUTION: A glass material of SiO2 -ZnO-B2 O3 or the like is heated, melted and stirred to be homogenize and thereafter rapidly cooled, crushed and thereafter classified, so that an amorphous glass powder having a diameter of around 5 μm is provided. The glass powder is mixed with several percent filler oxide powder to forward glass crystallization and kept it at a certain temperature in a dry oven. A plasma jet flow 58 at around 6,000-10,000 deg.C is formed by converting gaseous Ar fed from a gas injection hole 52 into plasma by a negative electrode 54, a positive electrode 56 and a coil 60 in a D.C. are plasma jet deposition device arranged in high vacuum, a mixed powder is fed from a powder injection hole 62 into it, melted and deposited on a glass substrate 10 retained by a water-cooled substrate holder 50, to form a dielectric layer. |
