| 摘要 |
PROBLEM TO BE SOLVED: To realize a uniform plasma treating by improving the uniformity of plasma density in the neighborhood of a face to be treated in an object to be treated. SOLUTION: This plasma device is provided with a plasma generating part A and a plasma treating part B. High frequencies are impressed to an antenna means 3 by a first high frequency power source 6, and an alternating electric field is formed in a treating chamber 11, and a solenoid coil 4 is excited by a power source 8 so that a static magnetic field having a magnetic force line in the axial direction of a silica tube 2 can be formed. Thus, a plasma flow can be vertically made incident on the surface of a wafer W, and a uniform treatment can be operated. |
