| 摘要 |
PROBLEM TO BE SOLVED: To eliminate defects in fixing with a rear electrode by fixing the surface potential of a semiconductor supporting substrate of an SOI substrate in a surface. SOLUTION: An SOI substrate is constituted by providing a semiconductor layer 22 on a semiconductor supporting substrate 21 with a silicon oxide film 23 in between. A conductive layer 32 which passes through a silicon oxide film 23 and reaches the semiconductor substrate 21 is provided to a board potential extracting region 200, which is insulated and separated from an element formation region 100 of the semiconductor layer 22 by an insulation layer 29 and a substrate potential fixing electrode 28 connected electrically on the conductive layer 32, is connected at the same potential as that of an anode electrode 27 of a diode provided to the element formation region 100. |
