FORMATION OF ETCHING MASK IN GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To form a mask effectively while enhancing productivity. SOLUTION: Silicon dioxide SiO2 or aluminum oxide Al2 O3 is deposited on an Alx Ga1-x N (0<=x<=1) semiconductor and photoresist is formed thereon and exposed in specified pattern before being removed. The silicon dioxide SiO2 or aluminum oxide Al2 O3 is then etched using the patterned photoresist as a mask to form an etching mask (laminate structure of first and second mask layers 4, 5) for the Alx Ga1-x N (0<=x<=1) semiconductor.