| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion element which ensures high conductivity while ensuring good interface characteristics by avoiding film quality deterioration of a p-layer due to the drawing effect of hydrogen of impurity from a semiconductor layer and has a low light absorption and good interface characteristics with respect to both an oxide transparent conductive film and photoelectric conversion layer. SOLUTION: This photoelectric element has a p-layer which is constituted of photoelectric conversion elements having pin junction, the p-layer is formed by laminating a first p-layer 7 of 5 nm thickness or less with an impurity uniformly added thereto and a second p-layer 8 containing no p-type impurity, formed by gas decomposition where a photoelectric element can be realized which ensures a high conductivity while ensuring good interface characteristics by avoiding the film quality deterioration of the p-layer due to the drawing out effect of hydrogen of impurity from a semiconductor layer, suppress light absorption and has good interface characteristics with respect to both and oxide transparent conductive film and photoelectric conversion layer. |
