发明名称 METHOD AND APPARATUS FOR INSPECTING MASK BLANK AND REFLECTING MASK
摘要 PROBLEM TO BE SOLVED: To determine the presence of defects in a mask blank, by exposing a multi-layer film type mask blank in which a resist pattern becomes an absorbing pattern to extreme ultraviolet radiation through a specified optical system, transferring an image to a resist coated on a wafer, and comparing and inspecting the transferred pattern as the image. SOLUTION: First, a multi-layer film type mask blank is formed (S101). Next, a specified mark is formed on the multi-layer film type mask blank (S102). The multi-layer film type blank is cleaned and inspected with contamination (S103, S104). A resist pattern is formed on the multi-layer film type blank using an extreme ultraviolet radiation apparatus (EUV), etc., and visual inspection is performed (S105, S106). Further, the multi-layer film type blank formed with a pattern is transferred to a resist on a wafer by EUV and visual inspection is performed (S107, S108). The presence of defects, or the position, the size and the number of the defects if usable as a reflecting mask is recorded and the resist pattern is removed (S109, S110).
申请公布号 JPH11354404(A) 申请公布日期 1999.12.24
申请号 JP19980157130 申请日期 1998.06.05
申请人 HITACHI LTD 发明人 OIIZUMI HIROAKI;ITO MASAAKI;YAMANASHI HIROMASA;TERASAWA TSUNEO
分类号 G01N21/88;G01N21/956;G03F1/24;G03F1/58;H01L21/027 主分类号 G01N21/88
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