摘要 |
PROBLEM TO BE SOLVED: To determine the presence of defects in a mask blank, by exposing a multi-layer film type mask blank in which a resist pattern becomes an absorbing pattern to extreme ultraviolet radiation through a specified optical system, transferring an image to a resist coated on a wafer, and comparing and inspecting the transferred pattern as the image. SOLUTION: First, a multi-layer film type mask blank is formed (S101). Next, a specified mark is formed on the multi-layer film type mask blank (S102). The multi-layer film type blank is cleaned and inspected with contamination (S103, S104). A resist pattern is formed on the multi-layer film type blank using an extreme ultraviolet radiation apparatus (EUV), etc., and visual inspection is performed (S105, S106). Further, the multi-layer film type blank formed with a pattern is transferred to a resist on a wafer by EUV and visual inspection is performed (S107, S108). The presence of defects, or the position, the size and the number of the defects if usable as a reflecting mask is recorded and the resist pattern is removed (S109, S110). |