Semiconductor component especially a surface shaping stencil or support structure, e.g. for a DRAM or SDRAM capacitor plate

摘要

A semiconductor component has projections coated with two O3/TEOS (tetraethyl orthosilicate) films, the upper film being a high pressure deposited film. A semiconductor component production process comprises forming one or more projections on a semiconductor surface, forming a first O3/TEOS film on the projection top and side faces and the semiconductor surface separating the projections and covering the film with a second O3/TEOS film. An Independent claim is also included for a semiconductor structure having a silicon layer (100) with silicon projections (108) which have a top nitride region (106) and which are coated with two O3/TEOS films, the first film being a low pressure O3/TEOS film (114), and the second thicker film being a high pressure O3/TEOS film (116); or the first film being a plasma-enhanced CVD (PECVD) O3/TEOS film and being thinner than the second film.