Self aligned contact with interlayer to fill spaces between stacked patterns with contact holes and spacers on sidewalls of patterns

摘要

Self aligned contact is formed on a semiconductor device. An interlayer (10) fills spaces between stacked patterns formed over the substrate (100). The interlayer is etched using a mask pattern down to the surface of the substrate to form contact holes and spacers on sidewalls of patterns. The mask pattern is removed and the holes are filled with a second conductive layer. Self aligned contact is formed on a semiconductor device by forming spaced stacked patterns over a substrate with active (101) and inactive regions. Each stacked pattern has a conductive layer and insulating layer. A second insulating layer is formed with an interlayer insulating layer to fill spaces between patterns. The interlayer is etched using a mask pattern down to the surface of the substrate to form contact holes and spacers on sidewalls of patterns. The mask pattern is removed and the holes are filled with a second conductive layer.