| 摘要 |
<p>A method for producing a mask having patterns formed by connecting various circuit units arranged in a positional relationship through interconnection patterns. A pattern area (47) of a working reticle (43) is divided into already-existing patterns (S1 to S24) and newly-provided patterns (N1 to N8, P1 to P8). For the already-existing area (S1 to S24), reduced patterns of an already-produced master reticle are projected by image stitching by means of an optical projection aligner. For the newly-provided patterns (N1 to N8, P1 to P8), magnified patterns are drawn by means of an electron beam lithography apparatus to produce a new master reticle. The reduced image of the master reticle is transferred by image stitching by exposure by using an optical projection aligner.</p> |
