Integrierte Struktur eines Strom-Fühlwiderstandes für Leistungs-MOSFET-Vorrichtungen, insbesondere für Leistungs-MOSFET-Vorrichtungen mit einer Überstrom-Selbst-Schutzschaltung

摘要

An integrated structure current sensing resistor for a power MOS device consists of a doped region (20,21,50) extending from a deep body region (2) of at least one cell (1a) of a first plurality of cells, constituting a main power device, to a deep body region (2) of a corresponding cell (1b) of a second smaller plurality of cells constituting a current sensing device.