发明名称 |
METHOD OF PRODUCING SILICON OXIDE FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, DISPLAY, AND INFRARED IRRADIATING DEVICE |
摘要 |
<p>A method for manufacturing a silicon oxide film is characterized in that the method includes the steps of forming the silicon oxide film by a vapor deposition method or the like and of irradiating infrared light onto this silicon oxide film. Thus, according to the present invention, a silicon oxide film of relatively low quality formed at relatively low temperature can be improved to be a silicon oxide film of high quality. When the present invention is applied to a thin-film semiconductor device, a semiconductor device of high operational reliability and high performance can be manufactured. <IMAGE></p> |
申请公布号 |
EP0966029(A1) |
申请公布日期 |
1999.12.22 |
申请号 |
EP19980961631 |
申请日期 |
1998.12.25 |
申请人 |
SEIKO EPSON CORPORATION;MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MIYASAKA, MITSUTOSHI;SAKAMOTO, TAKAO |
分类号 |
C23C14/10;C23C14/58;C23C16/40;C23C16/56;H01L21/316;H01L29/49;(IPC1-7):H01L21/316;H01L21/336;H01L29/786 |
主分类号 |
C23C14/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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