发明名称 |
Thin-film electron emitter device and application equipment using the same |
摘要 |
A thin-film electron emitter device comes with a multilayer structure consisting of two, upper and lower electrodes with an insulative or dielectric layer being sandwiched therebetween. The upper or "top" electrode is structured from a sequential lamination of an interface layer, intermediate or "middle" layer and surface layer on or above the dielectric layer. The middle layer is made of a chosen material which is greater in sublimation enthalpy than the surface layer and yet less than the interface layer. When appropriate, the surface layer may be omitted providing two-layer structure rather than the three-layer structure. <IMAGE> |
申请公布号 |
EP0797233(A3) |
申请公布日期 |
1999.12.22 |
申请号 |
EP19970104187 |
申请日期 |
1997.03.12 |
申请人 |
HITACHI, LTD. |
发明人 |
KUSUNOKI, TOSHIAKI;SUZUKI, MUTSUMI |
分类号 |
H01J1/30;H01J1/312;H01J19/24;H01J29/04;H01J31/12;H01J37/073 |
主分类号 |
H01J1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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