发明名称 Thin-film electron emitter device and application equipment using the same
摘要 A thin-film electron emitter device comes with a multilayer structure consisting of two, upper and lower electrodes with an insulative or dielectric layer being sandwiched therebetween. The upper or "top" electrode is structured from a sequential lamination of an interface layer, intermediate or "middle" layer and surface layer on or above the dielectric layer. The middle layer is made of a chosen material which is greater in sublimation enthalpy than the surface layer and yet less than the interface layer. When appropriate, the surface layer may be omitted providing two-layer structure rather than the three-layer structure. <IMAGE>
申请公布号 EP0797233(A3) 申请公布日期 1999.12.22
申请号 EP19970104187 申请日期 1997.03.12
申请人 HITACHI, LTD. 发明人 KUSUNOKI, TOSHIAKI;SUZUKI, MUTSUMI
分类号 H01J1/30;H01J1/312;H01J19/24;H01J29/04;H01J31/12;H01J37/073 主分类号 H01J1/30
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