Etch process for single crystal silicon,申请号EP19970305224-传众专利搜索

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发明名称	Etch process for single crystal silicon
摘要
申请公布号	EP0819786(A3)	申请公布日期	1999.12.22
申请号	EP19970305224	申请日期	1997.07.15
申请人	APPLIED MATERIALS, INC.	发明人	ZHAO, GANMING;KO, TERRY K.;CHINN, JEFFREY DAVID
分类号	H01L21/302;C30B33/00;H01L21/3065;H01L21/76;H01L21/762;(IPC1-7):C30B33/08;C30B29/06	主分类号	H01L21/302
代理机构		代理人
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