发明名称 Address signal transition detecting circuit for semiconductor memory device
摘要 An address signal transition detecting apparatus includes an address transition detecting circuit for detecting transitions in address signals, accordingly generating address transition detection signals and summing the address transition detection signals to generate an address transition detection sum signal ATDSUM, respectively outputting a first pulse signal YE for activating a column address decoder, a second pulse signal P for activating a precharger and a third pulse signal SE for activating a sense amplifier in accordance with an address transition detecting sum signal ATDSUM, and once again outputting another first pulse signal YE for activating the column address decoder in response to a fourth pulse signal YE2 generated in accordance with the address transition detection sum signal ATDSUM and the first pulse signal YE. The apparatus enables accurately reading a data signal on a data line by twice generating the first pulse signal YE that serves to activate the column address decoder, whereby the sense amplifier is able to sense a data signal in an improved manner.
申请公布号 US6005826(A) 申请公布日期 1999.12.21
申请号 US19980054469 申请日期 1998.04.03
申请人 LG SEMICON CO., LTD. 发明人 AHN, JIN-HONG;YOON, OH-SANG
分类号 G11C11/41;G11C8/18;G11C11/407;G11C11/409;(IPC1-7):G11C7/00 主分类号 G11C11/41
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