发明名称 Surface acoustic wave device
摘要 In a surface acoustic wave device comprising an inter-digital electrode on a surface of a substrate wherein said substrate is a langasite single crystal belonging to a point group 32, a combination of a cut angle of the substrate out of the single crystal and-a propagation direction of surface acoustic waves is optimized. This makes it possible to achieve a surface acoustic wave device comprising a substrate having a temperature coefficient of SAW velocity, TCV, the absolute value of which is small, a large electromechanical coupling factor k2, and low SAW velocity. It is thus possible to achieve a filter device which is improved in terms of temperature stability, has a wide passband, and is reduced in size, especially an intermediate-frequency surface acoustic wave filter having improved characteristics best-fitted for mobile communication terminal equipment.
申请公布号 US6005325(A) 申请公布日期 1999.12.21
申请号 US19970824091 申请日期 1997.03.25
申请人 TDK CORPORATION 发明人 INOUE, KENJI;SATO, KATSUO
分类号 H03H9/02;(IPC1-7):H01L41/08 主分类号 H03H9/02
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