发明名称 |
MICROWAVE PLASMA ASSISTED GAS JET DEPOSITION OF THIN FILM MATERIALS |
摘要 |
A novel method and apparatus of fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at tow temperatures.
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申请公布号 |
CA2082432(C) |
申请公布日期 |
1999.12.21 |
申请号 |
CA19912082432 |
申请日期 |
1991.05.07 |
申请人 |
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发明人 |
SCHMITT, JEROME J.;HALPERN, BRET L. |
分类号 |
C23C16/452;C23C16/511;C23C16/513;(IPC1-7):C23C16/48 |
主分类号 |
C23C16/452 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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