Semiconductor device and manufacturing method therefor

摘要

The object of the present invention is to provide a method of manufacturing an improved semiconductor device in which overlay-accuracy can be enhanced even when a halftone mask is used. An oxide film is formed on an antireflection film. Resist films are selectively irradiated with light using a halftone phase shift mask. Subsequently, it is developed to form resist patterns for a connecting hole and an overlay mark. According to the present invention, the provision of an antireflection film under an oxide film prevents formation of a ghost pattern in an overlay mark portion.