PHOTORESIST POLYMER, ITS PRODUCTION, PHOTORESIST COMPOSITION, FORMATION OF PHOTORESIST PATTERN, AND SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To obtain a photoresist polymer excellent in etching resistance and heat resistance and capable of forming a fine pattern by adding a polymerization initiator to an organic solvent in which three specified compounds have been dissolved and subjecting the resulting solution to polymerization. SOLUTION: A solution is obtained by dissolving a compound of formula I (wherein R1 is a side-chain- or main-chain-substituted 0-10C alkyl or benzyl), a compound of formula II, and a compound of formula III (wherein (m) and (n) are each 1-3; and R2 is a 1-10C primary, secondary, or tertiary alcohol) in a molar ratio of (1-2):(0.5-1.5):(0.5-1.5) in an organic solvent. A polymerization initiator is added to this solution, and the resultant solution is subjected to polymerization at 60-75 deg.C for 4-24 hr in an atmosphere of nitrogen or argon. The product is precipitated and dried to obtain a photoresist polymer of formula IV (wherein X, Y, and Z are each a polymerization ratio of each monomer and have a ratio of (10-80):(10-80):(10-80) by mol. This polymer is mixed with 1-20 wt.% photic acid generator and 10-700 wt.% organic solvent to obtain a photoresist composition.