| 摘要 |
A region on a surface side of a sample is irradiated with a Ga ion beam to form a first laminar portion having a thickness of 50-200 nm small enough to allow the transmission electron microscopic observation. While the sample is being heated within a transmission electron microscope, a process in which silicide is being formed is observed at the first laminar portion. Thereafter, a second laminar portion is formed in a thick region of the sample, similarly to the first laminar portion. Then, the first and second laminar portions are comparatively observed in a non-heated state with the transmission electron microscope. If observation results of the two laminar portions in the non-heated state are the same, a result of observing the first laminar portion during the heating is taken to represent a phenomenon in a bulk state. If observation results of the two laminar portions are different from each other, the result of observing the first laminar portion during the heating is taken to represent a unique phenomenon resulting from the heating of the sample in a thin film state. Thus, a transmission electron microscopic observation involving the simultaneous heat treatment is correctly carried out with a few samples.
|
