Liquid phase deposition method for forming silicon dioxide film on HGCDTE or other II-VI semiconductor substrate

摘要

A method for growing a silicon dioxide film on a HgCdTe substrate includes a first step in which the HgCdTe substrate is cleaned with an alkaline aqueous solution. The cleaned HgCdTe substrate is then dried before being immersed in a liquid phase deposition solution in which the silicon dioxide film is deposited on the surface of the HgCdTe substrate at the rate as high as 1672 ANGSTROM /hr. The silicon dioxide film has a refraction rate as high as 1.465.