InAs/GaSb superlattice structure infrared detector fabricated by organometallic vapor phase epitaxy

摘要

The invention concerns an InAs/GaSb superlattice infrared detector that is prepared on a GaSb or a GaAs substrate by low pressure organometaleic chemical vapor deposition. The thickness of well and barrier modulated in the superlattice is used to control the wavelength of absorption. As the superlattice is sandwiched by the Si-doped InAs layer, the wavelength of absorption is in the 8 DIFFERENCE 14 mu m range. As the superlattice is sandwiched by the Zn-doped GaSb layer, the wavelength of absorption is in the 3 DIFFERENCE 5 mu m range.