发明名称 |
Semiconductor device with conductive plugs |
摘要 |
In a method of manufacturing a semiconductor device, a CMOS section composed of an N-channel MOS transistor and a P-channel MOS transistor and a memory section composed of at least a transfer gate MOS transistor is formed on a substrate. A plurality of conductive plugs is formed to penetrate a laminate insulating film to the MOS transistors. The laminate insulating film is composed of a first insulating film and a second insulating film. A capacitor section is formed on the laminate insulating film and the capacitor section is composed of an upper electrode, a dielectric film and a lower electrode. A third insulating film is formed on the laminate insulating film and the capacitor section. A wiring pattern is formed on the third insulating film to partially penetrate the second insulating film connect to the plurality of conductive plugs. A wiring pattern may be disposed in the laminate insulating film to connect at least two of the plurality of conductive plugs.
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申请公布号 |
US6004839(A) |
申请公布日期 |
1999.12.21 |
申请号 |
US19970804112 |
申请日期 |
1997.02.20 |
申请人 |
NEC CORPORATION |
发明人 |
HAYASHI, YOSHIHIRO;TANABE, NOBUHIRO;TAKEUCHI, TSUNEO;SAITO, SHINOBU |
分类号 |
H01L21/768;H01L21/8242;H01L21/8246;(IPC1-7):H01L21/823;H01L21/824 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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