| 摘要 |
An antimony/Lewis base adduct of the formula SbR3.L, wherein each R is independently selected from C1-C8 alkyl, C1-C8 perfluoroalkyl, C1-C8 haloalkyl, C6-C10 aryl, C6-C10 perfluoroaryl, C6-C10 haloaryl, C6-C10 cycloalkyl, substituted C6-C10 aryl and halo; and L is a Lewis base ligand coordinating with SbR3. The adducts of the invention are useful as metal source compositions for chemical vapor deposition, assisted chemical vapor deposition (e.g., laser-assisted chemical vapor deposition, light-assisted chemical vapor deposition, plasma-assisted chemical vapor deposition and ion-assisted chemical vapor deposition), ion implantation, molecular beam epitaxy, and rapid thermal processing, to form antimony or antimony-containing films.
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