发明名称 AUTOMATED GAS-PHASE GROWTH UNIT
摘要 FIELD: manufacture of semiconductor devices and integrated circuits. SUBSTANCE: unit has reactor with setting device, monitoring device incorporating laser beam source and two optical systems, one at reactor input and other at its output, as well as video camera with monitor, radio receiver and radio transmitter, feedback control device incorporating digital data converter, transmitter, and computer; the latter is connected to setting device. EFFECT: improved uniformity of thin-film structure growth due to optimized gas flow in reactor. 1 cl, 2 dwg
申请公布号 RU2143155(C1) 申请公布日期 1999.12.20
申请号 RU19980116984 申请日期 1998.09.07
申请人 MOSKOVSKIJ GOSUDARSTVENNYJ INSTITUT EHLEKTRONNOJ T;EKHNIKI 发明人 BARKHOTKIN A.V.;RAJNOVA JU.P.
分类号 H01L21/205 主分类号 H01L21/205
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