Semiconductor device production using etch-resist pattern - formed by covering acid-forming resist pattern with acid cross-linkable resist layer

摘要

Semiconductor device production comprises: (a) forming a pattern of a first acid-forming resist (1) on a semiconductor device layer; (b) covering the first resist with a layer of a second resist which undergoes a cross-linking reaction in the presence of an acid; (c) forming a cross-linked layer (4) in the second resist sections contacting the first resist; (d) forming a resist pattern by removing the second resist portions which are not cross-linked; and (e) etching the semiconductor device layer through the resist pattern mask. Also claimed is a semiconductor device produced by the above process.