发明名称 METHOD FOR PRODUCING CONTACT STRUCTURES IN SOLAR CELLS
摘要 The invention relates to a method for producing contact structures in semiconductor components, especially solar cells, and semiconductor components having these contact structures. According to the invention, recesses which extend through the first layer to or into a second layer located under said first layer are etched after positioning an etching mask (3) over a first layer or a series of layers (2). The etching is carried out in such a way that the etching mask is etched underneath and/or at least one area of the first layer (2) is provided with negative flanks. Afterwards, an electrically conductive material (9) is inserted in the recesses, whereby the etching mask (3) or the first layer (2) forms a shadow mask for inserting the material. The conductive material is placed in the recesses only up to a height at which there is still no contact between the conductive material (9) and the first layer (2). The structures permit the emitter to contact the base without additional masking. As a result, the invention makes it possible to produce metal contacts on solar cells in an easier and economical manner.
申请公布号 WO9956324(A3) 申请公布日期 1999.12.16
申请号 WO1999DE01246 申请日期 1999.04.27
申请人 FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.;LUEDEMANN, RALF;SCHAEFER, SEBASTIAN 发明人 LUEDEMANN, RALF;SCHAEFER, SEBASTIAN
分类号 H01L31/04;H01L21/033;H01L21/308;H01L21/768;H01L31/0224;H01L31/068;H01L31/18 主分类号 H01L31/04
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