发明名称 193 NM POSITIVE-WORKING PHOTORESIST COMPOSITION
摘要 <p>A polymer that when used with a suitable photoacid generator (PAG) forms a positive working photoresist. The polymer comprises of a tartaric polyanhydride backbone, an acetal protected 1,2 diol group; and a fused ring acetal group pendant to the backbone. The acetal protected α-hydroxy anhydride backbone structure, undergoes a efficient photoacid catalyzed cleavage, which gives rise to small molecular weight fragments which are readily dissolved in an aqueous base developer. This high contrast in solubility allows high resolution images to be produced. The fused rings offer etch resistance and can be comprised of either an adamantone or norcamphor ring structure. With the addition of a commercially available photo acid generator, the polymer formulation forms a positive working photoresist that offers high contrast and resolution.</p>
申请公布号 WO1999064932(A1) 申请公布日期 1999.12.16
申请号 EP1999003805 申请日期 1999.06.02
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